Texas Instruments (TI) has broken ground on new 300-mm semiconductor wafer fabrication plants (fabs) in Sherman, Texas, US.

The potential $30bn investment involves plans for four plants that will bring as many as 3,000 direct jobs.

TI chairman, president and CEO Rich Templeton said: “This is an important milestone as we lay the groundwork for the future growth of semiconductors in electronics to support our customers’ demand for decades to come.

“Since our founding more than 90 years ago, we’ve operated with a passion to create a better world by making electronics more affordable through semiconductors. TI is excited to bring advanced 300-mm semiconductor manufacturing to Sherman.”

The new fabs will produce tens of millions of analog and embedded processing chips every day that will be used electronics.

Sherman Mayor David Plyler said: “This groundbreaking marks the next era of semiconductor production in Sherman that promises to create decades of economic opportunity and improve the quality of life for the region.

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“We are grateful for TI’s long and continued investment in Sherman and look forward to our continued partnership.”

The new plants will be designed to meet LEED Gold certification.

Furthermore, advanced 300-mm equipment and processes in Sherman will cut down waste, water and energy consumption.

Production from the first plant is expected in 2025.

The new fabs will complement the company’s current 300-mm fabs, which include DMOS6 in Dallas, RFAB1 and the soon-to-be-finished RFAB2, both of which are located in Richardson, Texas.

RFAB2 is expected to start production later this year.

Furthermore, LFAB in Lehi, Utah, is expected to commence production in early next year.
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Image: TI and state officials participate in groundbreaking ceremony of the company’s new 300-mm semiconductor wafer fabs in Sherman, Texas. Source: Texas Instruments/PR Newswire.