Kioxia Corporation breaks ground on semiconductor fabrication facility in Japan

WCN Editorial Team 25 Feb 2021 ASIA BUILDINGS

Kioxia Corporation has broken ground on its semiconductor fabrication facility (Fab7) being constructed at Yokkaichi Plant in Mie Prefecture, Japan.

Once built, the facility is expected to become one of the most advanced manufacturing operations in the world, and will be dedicated to production of its proprietary 3D flash memory BiCS FLASH.

Phase I of the construction is slated to be finished by the spring of 2022.

Construction of this new facility will be segregated into two phases to enable continued production and shipment of flash memory products to meet market demand.

The Fab7 facility will feature an earthquake absorbing structure and an environmentally friendly design. It will feature the latest energy saving manufacturing equipment.

Situated in Yokkaichi Plant, the Fab7 facility will further increase Kioxia’s complete production capacity by launching an advanced manufacturing system that leverages AI.

Kioxia and Western Digital expect to continue their joint venture investments for this new facility, including on the creation of sixth-generation 3D flash memory.

The amount of data produced, stored and used around the world has grown exponentially. The flash memory market expects more growth, due to cloud services, 5G, IoT, AI and automated driving. Hence, the production of products in Kioxia Corporation’s Fab7 facility will help to meet the growing demand for memory around the world.


Image: Phase I of the construction is slated to be finished by the spring of 2022. Credit: Khusen Rustamov from Pixabay

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